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Journal Articles

Annealing process of defects in epitaxial SiC induced by He and electron irradiation; Positron annihilation study

Kawasuso, Atsuo; Redmann, F.*; Krause-Rehberg, R.*; Sperr, P.*; Frank, T.*; Weidner, M.*; Pensl, G.*; Ito, Hisayoshi

Materials Science Forum, 353-356, p.537 - 540, 2001/00

no abstracts in English

Journal Articles

Enhancement of electrical activation of aluminum acceptors in 6H-SiC by co-implantation of carbon ions

Oshima, Takeshi; Ito, Hisayoshi; Yoshikawa, Masahito

Materials Science Forum, 353-356, p.575 - 578, 2001/00

no abstracts in English

Journal Articles

Steam annealing effects on CV characteristics of MOS structures on (11$$bar{2}$$0) face of 4H-SiC

Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Takahashi, Kunimasa*; Kitabatake, Makoto*

Materials Science Forum, 353-356, p.635 - 638, 2001/00

no abstracts in English

Journal Articles

Generation and annihilation of intrinsic-related defect centers in 4H/6H-SiC

Frank, T.*; Weidner, M.*; Ito, Hisayoshi; Pensl, G.*

Materials Science Forum, 353-356, p.439 - 442, 2001/00

no abstracts in English

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